document number: 81501 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.4, 14-jul-10 1 silicon npn phototransistor vemt4700 vishay semiconductors description vemt4700 is a high speed silicon npn epitaxial planar phototransistor in a miniatur e plcc-3 package for surface mounting on printed boards. the device is sensitive to visible and near infrared radiation. features ? package type: surface mount ? package form: plcc-3 ? dimensions (l x w x h in mm): 3.5 x 2.8 x 1.75 ? high photo sensitivity ? high radiant sensitivity ? suitable for visible and near infrared radiation ? fast response times ? angle of half sensitivity: ? = 60 ? base terminal connected ? package notch indicates collector ? package matched with ir emitter series vsml3710 ? floor life: 168 h, msl 3, acc. j-std-020 ? lead (pb)-free reflow soldering ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec applications ? photo interrupters ? miniature switches ? counters ?encoders ? position sensors ? light sensors note ? test conditions see table basic characteristics note ? moq: minimum order quantity 94 8554 product summary component i ca (ma) ? (deg) 0.1 (nm) vemt4700 0.5 60 450 to 1080 ordering information ordering code packaging remarks package form vemt4700-gs08 tape and reel mo q: 7500 pcs, 1500 pcs/reel plcc-3 vemt4700-gs18 tape and reel mo q: 8000 pcs, 8000 pcs/reel plcc-3 ** please see document vishay material category policy: www.vishay.com/doc?99902
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81501 2 rev. 1.4, 14-jul-10 vemt4700 vishay semiconductors silicon npn phototransistor fig. 1 - power dissipation limit vs. ambient temperature absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit collector emi tter voltage v ceo 70 v emitter collec tor voltage v eco 5v collector current i c 50 ma collector peak current t p /t 0.1, t p 10 s i cm 100 ma power dissipation p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. reflow solder profile fig. 10 t sd 260 c thermal resistance junction/ambient soldered on pcb with pad dimensions: 4 mm x 4 mm r thja 400 k/w 020406080 0 25 50 75 100 125 p - power dissipation limit (mw) v t amb - ambient temperature (c) 100 20376 r = 400 k/w 10 30 50 70 90 thja basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit collector emitter breakdown voltage i c = 1 ma v (br)ceo 70 v collector emitter dark current v ce = 20 v, e = 0 i ceo 1200na collector emitte r capacitance v ce = 5 v, f = 1 mhz, e = 0 c ceo 3pf collector light current e e = 1 mw/cm 2 , = 950 nm, v ce = 5 v i ca 0.25 0.5 ma angle of half sensitivity ? 60 deg wavelength of peak sensitivity p 850 nm range of spectral bandwidth 0.1 450 to 1080 nm collector emitter sa turation voltage e e = 1 mw/cm 2 , = 950 nm, i c = 0.1 ma v cesat 0.15 0.3 v rise time, fall time v s = 5 v, i c = 1 ma, = 950 nm, r l = 1 k t r /t f 6s v s = 5 v, i c = 1 ma, = 950 nm, r l = 100 t r /t f 2s cut-off frequency v s = 5 v, i c = 2 ma, r l = 100 f c 180 khz
document number: 81501 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.4, 14-jul-10 3 vemt4700 silicon npn phototransistor vishay semiconductors basic characteristics (t amb = 25 c, unless otherwise specified) fig. 2 - collector dark current vs. ambient temperature fig. 3 - relative collector current vs. ambient temperature fig. 4 - collector ligh t current vs. irradiance fig. 5 - collector light curren t vs. collector emitter voltage fig. 6 - collector emitter capacitance vs. collector emitter voltage fig. 7 - turn-on/turn-off time vs. collector current 20 100 40 60 80 10 10 1 10 2 10 3 10 4 v ce = 20 v t amb - ambient temperature (c) i ceo - collector dark current (na) 94 8304 0 0.6 0.8 1.0 1.2 1.4 2.0 20 40 60 80 100 1.6 1.8 94 8239 t amb - ambient temperature (c) i ca rel - relative collector current v ce = 5 v e e = 1 mw/cm 2 = 950 nm 0.01 0.1 1 0.001 0.01 0.1 1 10 i ca - collector light current (ma) e e - irradiance (mw/cm2) 10 94 8316 v ce = 5 v = 950 nm 0.1 1 10 0.1 1 10 i ca - collector light current (ma) v ce - collector emitter voltage (v) 100 94 8317 e e = 1 mw/cm 2 0.5 mw/cm 2 0.2 mw/cm 2 = 950 nm 0.1 10 1 0 2 4 6 8 10 100 f = 1 mhz c ceo - collector emitter capacitance (pf) v ce - collector emitter voltage (v) 94 8294 0 0 2 4 6 8 10 12 14 2 8 6 4 v ce = 5 v r l = 100 = 950 nm t off t on i c - collector current (ma) t on /t off - turn-on/turn-off time (s) 94 8293
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81501 4 rev. 1.4, 14-jul-10 vemt4700 vishay semiconductors silicon npn phototransistor fig. 8 - relative spectral sensitivity vs. wavelength fig. 9 - relative radiant sensitivity vs. angular displacement package dimensions in millimeters 400 600 1000 0 0.2 0.4 0.6 0.8 1.0 s ( ) rel - relative spectral sensitivity - wavelength (nm) 94 8348 800 0.4 0.2 0 s rel - relative sensitivity 94 8318 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement mounting pad layout 1.2 2.6 (2.8) 1.6 (1.9) area covered with solder resist dimensions: ir and vaporphase (wave soldering) 4 4 0.5 21439
document number: 81501 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.4, 14-jul-10 5 vemt4700 silicon npn phototransistor vishay semiconductors solder profile fig. 10 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in moisture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 168 h conditions: t amb < 30 c, rh < 60 % moisture sensitivity level 3, acc. to j-std-020. drying in case of moisture absorpti on devices should be baked before soldering. conditio ns see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. tape and reel plcc-3 components are packed in antistatic blister tape (din iec (co) 564) for automatic component insertion. cavities of blister tape are covered with adhesive tape. fig. 11 - blister tape fig. 12 - tape dimens ions in mm for plcc-3 missing devices a maximum of 0.5 % of the total number of components per reel may be missing, exclusiv ely missing components at the beginning and at the end of the reel. a maximum of three consecutive components may be missing, provided this gap is followed by six consecutive components. fig. 13 - beginning and end of reel the tape leader is at least 160 mm and is followed by a carrier tape leader with at least 40 empty compartments. the tape leader may include the carrier tape as long as the cover tape is not connected to the carrier tape. the least component is followed by a carrier tape trailer with a least 75 empty compartments and sealed with cover tape. 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c adhesive tape component cavity blister tape 94 8670 1.85 1.65 4.0 3.6 3.6 3.4 2.05 1.95 1.6 1.4 4.1 3.9 4.1 3.9 5.75 5.25 8.3 7.7 3.5 3.1 2.2 2.0 0.25 94 8668 de-reeling direction tape leader min. 75 empty compartments > 160 mm 40 empty compartments carrier leader carrier trailer 94 8158
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81501 6 rev. 1.4, 14-jul-10 vemt4700 vishay semiconductors silicon npn phototransistor fig. 14 - dimensions of reel-gs08 fig. 15 - dimensions of reel-gs18 cover tape removal force the removal force lie s between 0.1 n and 1.0 n at a removal speed of 5 mm/s. in order to prevent components from popping out of the blisters, the cover tape must be pulled off at an angle of 180 with regard to the feed direction. 180 178 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 14.4 max. 10.0 9.0 120 94 8665 identification label: vishay type group tape code production code quantity 321 329 identification 4.5 3.5 2.5 1.5 13.00 12.75 62.5 60.0 14.4 max. 10.4 8.4 120 18857 label: vishay type group tape code production code quantity
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